| PART |
Description |
Maker |
| NNCD6.8J NNCD16J NNCD18J NNCD8.2J NNCD5.6J NNCD10J |
ESD NOISE CLIPPING DIODE 防静电噪音裁剪二极管
ESD noise clipping diode 2pin XSOF (flat type)
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NNCD68PH NNCD6.8PH NNCD6.8PH-T2 NNCD6.8PH-T1 |
LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE QUARTO TYPE: COMMON ANODE 5-PIN SUPER SMALL MINI MOLD 低电容式静电放电二极管噪声裁剪季刊类型：共阳引脚超小微型模具
ESD noise clipping diode 5pin SC-88A
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| HSMS-2700-BLK HSMS-2700-TR2 HSMS-2702-BLK HSMS-270 |
HSMS-270C · High power clipping/clamping diode
HSMS-270B · High power clipping/clamping diode
HSMS-2702 · High power clipping/clamping diode
HSMS-2700 · High power clipping/clamping diode
High Performance Schottky Diode for Transient Suppression
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| NNCD8.2B NNCD9.1B NNCD10B NNCD11B NNCD12B NNCD3.3B |
静电放电噪声裁剪二极00毫瓦
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 500 MW TYPE
|
NEC[NEC]
NEC Corp.
|
| HSMS-2700 |
High Power Clipping/clamping Diode
|
AGILENT TECHNOLOGIES
|
| 16CTQ100PBF 16CTQ080PBF 16CTQ060PBF |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 2.5 to 2.9; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 2.2 to 2.6; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 1.9 to 2.3; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
SCHOTTKY RECTIFIER 16 Amp
|
International Rectifier
|
| CPDF5V0C-HF |
Halogen Free ESD Diodes, V-C=15V, V-ESD=8kV
SMD ESD Protection Diode
|
Comchip Technology
|
| W49V002T W49V002P |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 3.7 to 4.1; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 3.4 to 3.8; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
Winbond Electronics Corp
|
| TA6038FNG |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 2.8 to 3.2; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
Toshiba Corporation
|
| TA1318NG |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.3 to 4.7; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 同步处理器，频率计数器集成电路电视分量信
|
Toshiba, Corp.
|
| SSM6N29TU |
High-Speed Switching Applications
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 1.9 to 2.3; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Semiconductor
Toshiba Corporation
|
